Via-filling Solutions

Via-filling substrate

By employing a high-conductivity, non-shrinkage via-filling process, copper paste or silver paste can be uniformly filled into a wide variety of via structures.

This technology has been widely adopted in ceramic packages for telecommunications applications and has earned a strong reputation for high reliability and consistent quality.

We supply these products as via-filled semi-finished substrates and provide a comprehensive service covering via drilling, via filling, and polishing.

By offering a one-stop process solution, we help simplify process management and ensure consistent product quality.

Catalog

Product Details

Features

Highly Reliable and High-Performance Via-Filled Structures
Uniform via filling with minimal voids and gaps provides excellent adhesion to the substrate. These structures offer outstanding electrical and mechanical reliability and are suitable for applications requiring high-density wiring and high heat dissipation performance.

Smooth Substrate Surface for Improved Mountability
The substrate surface can be finished to a high degree of flatness, enabling component mounting directly above filled vias. This increases design flexibility and allows more efficient utilization of substrate space.

Compliance with Environmental Regulations
Compliant with the RoHS 2 Directive, these materials can be used with confidence while helping to reduce environmental impact.

Specification

		Ceramic substrate	Ceramic substrate	Ceramic substrate	Glass substrate	Glass substrate	Organic substrate
Substrates	Substrate Material	AlN, Al₂O₃, SiN			Quartz glass, Alkali-free glass		Glass epoxy
Substrates	Size, Thickness	2×2～4.5×4.5 inch, 0.2～1.0 mm			2×2～4.5×4.5 inch, 0.2～1.0 mm		2×2～4.5×4.5 inch, 0.2～1.0 mm
Via	Filled Metal	Ag	Cu	Ag-Cu alloy	Ag	Cu	Ag
	Via Diameter	Φ0.05～1.0 mm	Φ0.05～2.0 mm	Φ0.05～1.0 mm	Φ0.05～0.5 mm	Φ0.05～0.5 mm	Φ0.05～0.5 mm
	Firing Temperature	～900 ℃	～900 ℃	～900 ℃	500～600 ℃	400～800 ℃	200～300 ℃
	Firing Atmosphere	Air	N₂	N₂	Air	N₂	Air
	Specific Resistivity	3～4 µΩ・cm	5～7 µΩ・cm	10 µΩ・cm	2～4 µΩ・cm	3～6 µΩ・cm	5～8 µΩ・cm
	Aspect Ratio	1.0～10.0	1.0～10.0	1.0～10.0	1.0～10.0	1.0～10.0	1.0～10.0
Non-polished	Flatness of filled area	＜±30 µm	＜±30 µm	-	＜±20 µm	＜±20 µm	＜±20 µm
LAP polishing	Recommended Polishing Allowance*	＞0.15 mm	＞0.15 mm	＞0.15 mm	＞0.15 mm	＞0.15 mm	＞0.15 mm
LAP polishing	Flatness of filled area	＜±3 µm	＜±3 µm	＜±3 µm	＜±3 µm	＜±3 µm	＜±3 µm
POL polishing	Recommended Polishing Allowance*	＞0.15 mm	＞0.15 mm	＞0.15 mm	＞0.15 mm	＞0.15 mm	＞0.15 mm
POL polishing	Flatness of filled area	＜±2 µm	＜±2 µm	＜±2 µm	-	-
Via cross-section
Via surface